Ion beam annealing effects of surface amorphous layers produced by Sb implanted 〈100〉 Ni using 1.5 MeV Xe + and Ar + ion beams

Abstract

The studies of Xe and Ar ion beam annealing of amorphous layers produced by ion implantation of Sb into 〈100〉 Ni at 80 keV was achieved using RBS/channelling techniques. The results of Xe ion irradiation showed that the annealing of the damage occurs in two distinct stages in which the final stage was accompanied with a rapid long range diffusion of the Sb atoms. This annealing stage took place once the Sb peak concentration fell below ~8 at.%. These observations would appear to confirm that the annealing process, previously seen during the isochronal and Ar ion beam processes, is mainly due to the change in the Sb peak concentration which is brought about by the rapid diffusion of the Sb impurity. The effect of the high energy irradiation of the samples simply enhances the process. Results obtained at the lower irradiation temperature of 250°C would indicate that the process is not purely ballistic in nature but also depends on the mobility of the vacancies produced.