Properties of GaAs1 - xPx epitaxial films prepared by ion beam sputter deposition

Abstract

Many works on heteroepitaxial growth of III—V compound semiconductors on an Si substrate have been reported. However, many problems must be solved. In this study, GaAs1 - xPx heteroepitaxial growth on Si and GaAs substrates at 250°C was carried out using the ion beam sputter-deposition method. The dependencies of crystallinity and electrical properties of deposited films on x were investigated. The film composition was investigated by evaluating the core level spectra for As-3d and P—2p levels in X-ray photoelectron spectroscopy. In this evaluation, the composition was independent of the kind of substrate and film crystallinity. When a polycrystalline GaAs target was sputtered by Xe ion beam, the deposited film was neither single-crystalline nor stoichiometric. When a mixture of Xe and PH3 ion beams was used, the deposited film was stoichiometric and RBS revealed that the film had excellent crystallinity. When a film was deposited on a GaAs substrate, the carrier mobility was higher than when it was deposited on Si.