Ion beam analysis of PZT thin films

Abstract

We report the recent results on the effect of oxygen distribution in the Pb(Zr 0.53Ti 0.47)O 3 (PZT) ferroelectric thin films on the dielectric constant and P– E hysteresis and also on the crystalline quality. Depth profiling of oxygen content was estimated accurately by a newly developed ion beam technique (3.045 MeV 16 O (α,α) 16 O resonant backscattering), and the crystalline structure of the films was estimated by an X-ray diffraction method. The PZT films were fabricated by a helicon sputtering method. With increasing substrate temperature during deposition, the films were found to have a smaller content of Pb, though the Pb content did not change much for the post-annealing of the films at 750°C. We have changed the parameters of substrate temperature, annealing temperature, composition of target PZT pellets, partial pressure of oxygen gas, and so on, and finally have obtained very good PZT films with the dielectric constant of about 1400. The properties of the high dielectric PZT film has been clarified in terms of the depth profiling of films and crystalline structure.