Abstract
We constructed a capacitively coupled plasma (CCP) source and installed various diagnostic tools to perform process diagnosis using a plasma process gas (CxFy). We obtained the energy and mass distributions of the ions and radicals from Ar, C4F8/Ar, and C4F6/Ar plasmas. The energy distribution of the ions incident on the substrate was controlled using the self-bias voltage, and the ion energy was found to be inversely proportional to the mass. The measured species and density of the ions and radicals can help understand plasma process results as they provide information about the ions and radicals incident on the substrate.
Highlights
Coupled Plasma Source UsingThe plasma process has been widely used in many semiconductor processes because it has several advantages over wet processes
The energy of the an inert gas (Ar)+ ions entering the electrode is the sum of the plasma potential and the self-bias potential formed on the radio frequency (RF)-powered electrode
The Ar ion energy distribution widens with increasing RF power, as seen from Equation (1) [16–18]
Summary
Coupled Plasma Source UsingThe plasma process has been widely used in many semiconductor processes because it has several advantages over wet processes. The energy and mass distributions of the ions and radicals in a plasma depend on various process parameters, and they play an important role in controlling semiconductor processes such as etching, cleaning, and deposition. The radio frequency (RF) bias frequency applied to substrates affects the ion energy distribution of ionic species. It shows the ion energy distribution according to ion behavior across the sheath on the substrate. The RF bias power applied to substrates affects ion energy distribution according to the change in sheath voltage. The RF bias power applied to substrates generates a self-bias voltage and affects the energy of ions entering the substrate. The high ionic energy required in the HARC etching process is generated according to the RF bias power. IED measurements according to RF bias power are very important
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