Abstract
Heavy Ion Elastic Recoil Detection Analysis (HIERDA) is a developing analytical technique which has found application in the study of various semiconductor systems, particularly III-V semiconductor compounds. The technique involves the use of a high energy heavy ion analysing beam to knock constituent nuclei from the target material and detector system to measure mass or atomic number as well as energy, and thus depth of origin information, from these recoiling nuclei. The present work examines the sample damage induced in GaAs and Si by an 127 I analysing beam of various energies in the range, 54 – 98 MeV, and dose under typical analysis conditions for the Lucas Heights HIERDA system which employs a time of flight and energy (ToF-E) detector system.
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