Abstract
An ion implanted p-i-n diode was demonstrated for the first time using the multicycle rapid thermal annealing technique and a capping structure that was re-optimized for device structures on bulk GaN. Electrical characterization exhibited rectifying behavior with low reverse leakage current and forward characteristics consistent with a p-n junction. Electroluminescence suggests recombination in the anode region under forward bias, and reverse leakage paths through crystalline defects. The ability to integrate p-type GaN layers in device structures by ion implantation represents a significant step for next-generation power devices.
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