Abstract
We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibit Schottky barrier. Owing to the low density of state of graphene, the position of graphene’s Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height at graphene/TMD interface. Based on this mechanism, a vertical transport in the heterostructure exhibits large current modulation of >105, and at the same time the heterostructure reveal operation current density of ~104 A/cm2. These results reveal potential high performance of vFET for electronics applications.
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