Abstract
The critical issues, technical challenges and viable technologies of tunneling FETs (TFET) using a variety of semiconductors such as III-V, Ge, Si and oxide semiconductor are addressed. Device engineering indispensable in improving the performance of TFETs is summarized with emphasis on the source/channel materials and structures. The electrical characteristics of TFETs using InGaAs quantum well (QW) homo-junction TFETs, Ge/strained SOI hetero-junction TFETs and (Si, Ge)/ZnO hetero-junctions are mainly presented as the viable examples.
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