(Invited) Transistors, Memristors and Optoelectronics Based on Two-Dimensional Molybdenum Disulfide

Abstract

Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide material. This two-dimensional (2D) layered material has a band gap ranging from 1.3 eV in bulk form (indirect) to 1.88 eV as a monolayer (direct). The material has been suggested as a potential candidate for applications in nanoelectronics, optoelectronics and neuromorphic computing [1]–[4]. In this talk, the principles of scalable growth through thermal conversion of metals and metal-organic vapor phase growth will be discussed [5], [6]. These materials are then integrated into the silicon technology platform to demonstrate device applications.Conventional field effect transistors with MoS2 channels show promising characteristics. In addition, ion-based plasticity promises to enable memristive functionality on MoS2 devices. In particular, vertically aligned MoS2 layers allow the tuning of energy barriers at MoS2/semiconductor Schottky junctions through mobile ions [7], [8]. These ions (OH-) likely originate from catalytic splitting of water molecules.Spectral response measurements of MoS2 based devices provide insight into the band structure and beyond, as photodetectors based on MoS2/silicon/graphene and MoS2/amorphous silicon heterostructures show peculiar responsivity in the infrared regime [9]–[11]. Acknowledgements The authors acknowledge funding through the European Union’s Horizon 2020 research and innovation programme under grant agreements 785219 (Graphene Flagship) and 829035 (QUEFORMAL), the German BMBF grant NEUROTEC (16ES1134) and the DFG projects MOSTFLEX (407080863) and ULTIMOS2 (412113712).