Abstract
Bardeen and Brattain, following a suggestion by Gibney on Nov. 17th, 1947, successfully negated the influence of surface states on Nov 21st and, on Dec 16th, achieved transistor action – point-contact semiconductor amplification (of minority-carriers) in polycrystalline Ge. Bardeen and Brattain’s Magic Month was followed by Shockley’s Magic Month, which culminated with Shockley’s minority-carrier injection (Jan 23rd 1948) over the electrostatic barrier at the source / base interface, into the base where the minority-carriers were transported across the base en route to being accumulated at the collector in the polycrystalline Ge sample. Indeed, although all the principals involved were looking to develop a majority-carrier device, their minds were amply prepared to absorb the lessons they learned with the minority-carriers and the resulting new solid-state electronics era was initiated.
Published Version
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