Abstract
Although silicon power devices have served well as the key technology for power electronics for several decades, silicon-based technology is reaching its physical limits, in terms of power handling and switching frequency capabilities. Thanks to its superior material properties, SiC is the most promising post-silicon alternative for high voltage, high frequency, and high temperature power conversion applications. Since the advent of the first SiC Schottky Barrier Diode (SBD) in the 1990’s, numerous research groups have devoted their efforts to commercialize SiC devices such as MOSFETs, JFETs, and Thyristors. In this talk, issues regarding current SiC devices and processing technology will be identified and future research directions will be discussed.
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