Abstract
Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ·cm is measured in 180 nm thick films for In/(In+Zn) ratio equal to 6 %, corresponding to a majority carrier density of 6·1020 cm-3 and a mobility of 3 cm2/Vs. All the films are highly transparent (> 80 %) in the visible range.
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