Abstract
Al2O3 is the first ALD film being introduced in the solar cell (PV) industry. The primary driver for implementation is two-fold: excellent surface passivation and low cost-of-ownership. ‘Spatial’ ALD systems satisfy both criteria. On Fz and Cz-type wafers minority carrier lifetimes in the range of 5-8 and 0.5-1ms, respectively, are obtained. With this type of film, PERC-type cells with efficiencies > 20% were realized. Further, such cells are processed with throughputs > 3000 wafers/hr. The thermal stability of the film is improved by selecting thin films (< 6nm), and by carrying out a post-deposition anneal at 600°C. This anneal drives out excess hydrogen that is incorporated during deposition, thereby avoiding the formation of blisters upon exposure to subsequent high-temperature (‘firing’) steps.
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