Abstract
A general investigation of flat panel displays, leads to the conclusion that an electrooptic transducer (liquid crystal for instance) operates in optimized conditions when directly driven by an active matrix system. Such a matrix can be fabricated by different procedures, but one of the most promising is the a-Si TFT technology. a-Si TFT seems quite suitable for LC driving, nevertheless polysilicon TFT should be preferred for fast peripheral addressing circuits. Two basic TFT processes are proposed, using a-Si and SiO2 films deposited on glass by the glow discharge technique. In the first process, silicon was deposited at 300°C instead of 500°C in the second. Only in this last case silicon could be easily recrystallized to get polysilicon TFT on glass. In this paper, the major attention was focused on amorphous Si TFT. Static and dynamic characteristics are presented putting forward the predominant role of traps, and a LC switching simulation is shown. Finally a large area circuit is proposed and the relevant problems discussed.
Published Version
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