Abstract
The combination of high-k materials and nanocrystalline semiconductors leads to remarkable properties for various applications. The phase separation of ZrGeO and ZrSiO films in superlattice geometries were investigated. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1000 °C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of Ge nanocrystals was observed after annealing at 650 °C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.
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