Abstract
GaN power switches have demonstrated proven performance benefits in below 1200V applications. Scaling the GaN power devices to higher voltage will bring the performances benefits to high power systems, such as the electric grid. One technical challenging in upscaling the voltage is the E-field nonuniformity in GaN devices. The author's group has attempted to achieve uniform E-field and to upscale the breakdown voltage of GaN devices, using a charge-balanced super-heterojunction structure. GaN Schottky diodes with over 10 kV breakdown voltage have been demonstrated. These devices showed no degradation of dynamic on-resistance up to 3 kV off-state bias stress. This talk will report design, processes, and characteristics of the GaN super-heterojunction devices.
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