Abstract
Temperature dependent properties of wide bandgap semiconductors have been used to calculate theoretical specific on-resistance, breakdown voltage, and thermal run-away temperature in SiC, GaN, diamond, and Si vertical power devices for comparison. It appears mainly that diamond is interesting for high power devices for high temperature applications. At room temperature, diamond power devices should be superior to SiC only for voltage higher than 30–40 kV, due to the high energy activation of the dopants.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
