Abstract
Modulation of materials is crucial for developing the physicochemical properties and applying them to devices. For transistors, the alignment of energy levels is critical; therefore, the corresponding modulation of carrier concentrations and material phases is a fundamental issue. In this talk, I will focus on the modulation of 2D semiconductors, known as transition metal dichalcogenides (TMDCs), to modulate electronic properties by interfacing with organic materials.About a decade ago, we demonstrated molecular doping to a TMDC material, MoS2, to modulate the carrier concentration effectively and achieve a degenerately doped level [1]. Various molecules come out after the work. I would discuss the modulation of carrier concentrations of bulk and monolayer MoS2 by interfacing with organic materials from the point of transport behaviors and sensor applications [2].In addition to the carrier modulation, we are tackling the modulation of phases of TMDCs. The usual semiconductive phase is known as 1H or 2H phase in the case of MoS2. If we can convert the crystalline phase to 1T/1T' phases, it would be interesting to apply it to electronics as a metallic material or quantum devices. Since the 1H and 2H phases are thermodynamically stable, it is not easy to convert MoS2 to 1T/1T' phases. I will show our current state of modulating the phases by applying chemical techniques.[1] D. Kiriya, et al., Air-stable surface charge transfer doping of MoS2 by benzyl viologen, J. Am. Chem. Soc. 2014, 136, 7853.[2] K. Matsuyama, et al., Metallic transport in monolayer and multilayer molybdenum disulfides by molecular surface-charge transfer doping, ACS Appl. Mater. Interfaces, 2022, 14, 8163; A. Fukui, et al., Unusual selective monitoring of N,N-dimethylformamide in a two-dimensional layered field-effect transistor, ACS NANO, 2023, 17, 14981.
Published Version
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