(Invited) Plasma Immersion Ion Implantation: Technology, Modelling, and Applications for Nanofabrication and 2D Materials

Abstract

Plasma Immersion Ion Implantation (PIII) is an ion implantation technology in which the target to be implanted (i.e. a semiconductor wafer) is immersed in a plasma, and implanted with positive ions by the application of a high-voltage negative-bias pulse to the target. Because of the high plasma density achievable in modern plasma sources, large fluences can be implanted across large wafer areas, without beam scanning. PIII is well suited for a variety of nanofabrication applications. Because of its compatibility with ordinary silicon CMOS device processing, high fluence PIII is a versatile method for in situ fabrication of nanocrystals for integrated circuit applications. This talk will review the physics of energetic ions implanted into solid materials, and illustrate how post-implant thermal treatment can be used to form nanocrystals in the ion-implanted region. A number of potential applications of PIII as a materials synthesis technique will be discussed.