(Invited) Photoluminescence Properties of Single InAsP Quantum Dots Embedded in InP Nanowires

Abstract

Non-classical light emitters that can generate single photons with a negligible multiphoton probability are one of the key components for quantum information technologies. Deterministically grown III-V semiconductor nanowires containing quantum dots are gaining interest as a viable platform for quantum key distribution applications. In this talk, we will report on our recent development of the fabrication of InAsP single quantum dots embedded within InP photonic waveguide nanowires. In particular, we outline the importance of the photonic waveguide design for optimum photon generation and coupling to external optics [1]. The measured count rate dependence on normalized wire diameter, D/λ (figure 1) of the nanowire sources is consistent with calculations of the spontaneous emission rate into the fundamental HE11 nanowire waveguide mode (ΓHE11). Manipulating dot growth conditions and engineering the band structure around the dot (dot-in-a-rod configuration) are applied [2] to enhance the photoluminescence emission rate at 1310 nm and 1550 nm. Single photon emission with very low multiple photon probability is demonstrated at O- and C-band [3,4]. Temperature dependent, second-order correlation measurements on the 1310 nm source show that these nanowire sources can generate single photons up to temperatures of 220 K [3].[1] S. Haffouz, et al., Nano Letters, 18, 3047 (2018).[2] S. Haffouz, et al., Applied Physics Letters, 117, 113101 (2020).[3] P. Laferriére, et al., Nano Letters, 23, 962 (2023).[4] A.N. Wakileh, et al., arXiv:2309.13381 (2023). Figure 1