Abstract
The anodic oxidation of GaAs is a technologically simple and a low temperature process enabling the production of reproducible high-quality native oxides on GaAs. The paper describes the influence of the GaAs properties and the best conditions for the anodic behaviour of GaAs. The initial phase of the oxide formation was also investigated in two different electrolytes. The minimum thickness of the native oxide covering the whole surface of GaAs was found to be a function of the anodic current density employed and can be as thin as 11 Å.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
