Abstract
An anodic native oxide has been grown onto indium phosphide using glycol-based solutions. The variation of the anodic current behaviour with various circuit parameters has been measured, together with the thickness of the oxide as a function of voltage. MOS capacitor structures have been fabricated using this native oxide as the insulator and the I/ V and C/ V characteristics of these structures have been measured and analysed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
