Abstract
We report successful demonstration of 3.3kV SiC charge-balanced (CB) JBS diodes and 4.5kV CB MOSFETs with Ron,sp significantly below 1-D SiC unipolar limit. These devices implement a novel scalable drift layer architecture for a high voltage switch as an alternative solution to super-junction devices. Furthermore, 2kV, SiC super-junction (SJ) PiN diodes are reported. These diodes are formed by deep implantation of Al and N and show a blocking voltage 500V higher than comparable non-SJ diodes.
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