Abstract
Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.
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