(Invited) Material Engineering for 7nm FinFETs

Abstract

Design rules and several candidate channel materials are explored for the 7nm technology node. FinFET transistor architecture is chosen, and the analysis is performed using 3D modeling tools, including ballistic transport, Schrodinger-driven quantization, and band-to-band tunneling leakage. The comparative analysis of Si, SiGe, Ge, GaAs, InGaAs, and InAs channel materials points to InGaAs with more than 80% Ga content as the best candidate for low power applications at 7nm design rules.