(Invited) Non Planar Non Si CMOS - Challenges and Opportunities

Abstract

High mobility materials (such as SiGe, Ge and III-V) are attractive replacements for the conventional Si channel material in future CMOS technology nodes (<11nm) to improve performance and reduce power. To control short channel effects at these aggressively scaled device geometries, non-planar multi-gate devices will be needed. Although progress has been made in high mobility non-planar devices with SiGe, Ge and III-V channel materials, significant integration challenges remain. In this paper, the opportunities of non-planar non-Si CMOS and the hetero-integration challenges of high mobility material epitaxy on Si are discussed.