Abstract
Silicon-rich silicon nitride (SiNX) films have attracted enormous interests due to their promising luminescence properties and well compatibility with current CMOS technique. In this short review, the fabrication process of SiNX was addressed as well as their chemical composition and structure. The optical properties and future applications of the light emitting devices (LEDs) were also discussed. By analyzing the carrier conduction and combination mechanisms, electroluminescence (EL) intensity of LEDs was greatly improved through the following approaches: passivation of the interfacial states between SiNX films and Si substrates through NH3 plasma pre-treatment and post-annealing process; the balance of carrier injection via SiO2 electron accelerating layer; increase of the carrier-injection efficiency and light extraction efficiency and the enhancement of radiative recombination efficiency by surface plasmon.
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