Abstract
The measurements of laser induced emission (LIWE) and photocurrent (LIPC) of GaN semiconductor nanoceramics are reported. It was found that an origin of both the processes is related to the multiphoton ionization. They occur in a spot of focused laser beam irradiating a surface of ceramics. The emission and photocurrent are characterized by the excitation threshold and exponential increase of intensity. It was observed the hysteresis behavior in forward and backward measurement cycle for emission and photocurrent. A coexistence of both the effects open a possibility for applications in memory devices.The authors would like to thank the National Science Centre, Poland for financial support (grant no. NCN 2021/40/Q/ST5/00220)
Published Version
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