(Invited) Innovative Wide Band Gap Power Devices Achievements in ITRI

Abstract

Wide band gap semiconductors, such as silicon carbide (SiC) and Gallium nitride (GaN), provide higher breakdown voltage, higher operation temperature, higher thermal conductivity and higher switching frequency than conventional silicon device, thus there are many research institutes and companies focus on wide band gap device development and explore the benefits of using those devices in power electronics application. In ITRI, there is a program to develop wide band gap device and we have established a wide band gap Power Electronics Consortium (WPEC) to link companies who is interested on this device and application and eventually form a supply chain in Taiwan. ITRI has achieved very good results on the wide band gap device design and process development, such as high uniformity and productivity of SiC SBD device with breakdown voltage > 1200V and current rating > 20A, two mask-level process of TMBS (trench MOS barrier schottky) device with breakdown voltage > 600V, SiC MOSFET with low interfacial defect density and breakdown voltage >1200V, and innovative normally-off GaN MIS-HEMT device with threshold voltage >2V.