Abstract
Wide bandgap (WBG) power devices, e.g., silicon carbide (SiC) and gallium nitride (GaN)-based diodes, metal-oxide field-effect transistors (MOSFETs), junction gate field-effect transistors, bipolar junction transistors, insulated gate bipolar transistors (IGBT), high-electron-mobility transistors, etc., are poised to change the landscape of power electronics industry. Ideally, these devices are expected to have better efficiency, higher temperature tolerance, and higher voltage blocking capability than their silicon (Si) counterparts. Emerging applications of WBG devices include ultrahigh power density switching power supplies, high-temperature converters and inverters for automobiles, ships, and airplanes, medium-voltage and high-speed motor drives, voltage source converter-based high-voltage dc systems, high-frequency power supplies for medical devices and wireless charging, etc. But to achieve the expected superior system performance with WBG devices, innovations are needed not only in materials and devices but also in circuit topology, and systems design and optimization.
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