Abstract
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 uA/um (circumference-normalized) or 2592/2985 uA/um (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/um. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.
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