Abstract
Combinations of layers involving wide and ultra-wide bandgap materials for electronic benefits, thermal management, and other aspects can be achieved using heterointegration techniques that include but also go beyond epitaxial deposition. Here, we describe some important wide bandgap combinations achieved through wafer bonding / fusion / layer transfer / as well as deposition to demonstrate how control of interfaces can lead to better multi-layer performance and also how thermal transport models can be applied to these novel systems to lead to improvements in combined electronic and thermal management performance. Examples will include bonding using diamond, GaN-AlN bonding across N-face and metal face interfaces, and b-Ga2O3 structures. The importance of understanding interface preparation for both bonding and deposition applications as well as judicious introduction of thin interfacial layers will be described for such wide bandgap materials.
Published Version
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