Abstract
We investigated the role of hetero interface of ionic high-k and covalent SiO2 on flatband voltage (V fb) and threshold voltage (V th) shifts for CMOS and TFT. The V fb and V th of CMOS and TFT including high-k/SiO2 gate insulator were influenced due to the bottom interface dipole which causes at high-k/SiO2 interface. It is clear from experimental results that the direction and strength of the dipole moment strongly depend on oxygen concentration at high-k/SiO2 interface. We also found that GIZO TFTs with an Al2O3/SiO2 gate insulator exhibited positive V th shift, electron mobility degradation by the fixed charge at Al2O3/GIZO interface and the bottom interface dipole at Al2O3/SiO2 interface. The hetero interface of high-k and SiO2 layers is very important not only for recognizing the mechanism of V fb and V th shifts but also for designing nano-electronic devices with high-k/SiO2 stack structure.
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