Abstract
For the ferroelectric material with the conventional perovskite crystal structure and the chemical formula of ABO3, the charge neutral level is located close to the conduction band edge, and when forming a device, it causes a high leakage current due to low Schottky barrier height. Therefore, a relatively thick ferroelectric thin film was required, which was not suitable for the existing CMOS technology that is evolving through miniaturization. Meanwhile, ferroelectric properties were discovered in hafnia in 2011, and the ferroelectric properties of hafnia is observed in an orthorhombic crystal structure. Due to its simple structure and excellent CMOS process compatibility, it has received much attention for ferroelectric hafnia thin films and various application technologies using them. In this report, we will look at various application technologies using hafnia ferroelectrics, and we will examine the characteristics of hafnia ferroelectrics suitable for each device.
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