Abstract
Si cantilevers with thin film ME 2-2 composites consisting of AlN as the piezoelectric phase and of amorphous magnetostrictive Metglas as the magnetostrictive phase show an extremely high ME coefficient of up to 1800 V/cmOe at mechanical resonance and about 3 V/cmOe out of resonance at a magnetic bias field of 6 Oe. Using an exchanged biased multilayer of the sequence Ta/Cu/Mn70Ir30/Metglas as the magnetostrictive phase the coefficient is approximately reduced by a factor of 2.5 (comparing the same resonance frequencies) but no magnetic bias field is needed any more.
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