(Invited) Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs

Abstract

Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS, high-quality gate-stack and source/drain (S/D) junction formations are essential. We fabricated Ge n- and p-MOSFETs using the gate-stack formation by bilayer (SiO2/GeO2) passivation and using S/D junction formations by thermal diffusion of P and ion implantation of B. The electron and hole channel mobilities of the fabricated MOSFETs were 1097 and 376 cm2V-1s-1, respectively, despite the very thin GeO2 thickness. We will present the detailed fabrication method and device performance.