Abstract
Device quality GaN film deposition on silicon is challenged by significant mismatches between crystal lattices and thermal expansion coefficients, as well as silicon thermal stability. Furthermore, wafer fabrication economies of scale benefit from Si-based technology while, historically, GaN processing has leveraged traditional III-V wafer fabrication principles. These challenges are being addressed through a broad-based effort encompassing university research, corporate R&D, and federal facilities. Substantial progress has been made and is reviewed here, along with a view to the future direction for this broadly useful wide bandgap semiconductor material system.
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