Abstract
Flexible charge-trap memory thin-film transistors (f-MTFTs) using oxide semiconductors were proposed and fabricated on plastic poly(ethylene naphthalate) substrate. The gate-stack of the f-MTFT was composed of all oxide layers such as In-Ga-Zn-O (IGZO) active channel, ZnO charge-trap layer, Al2O3 blocking/tunneling layers, and In-Sn-O transparent electrode, in which hybrid barrier layer structures and double-layered tunneling oxides were designed so that the f-MTFTs could exhibit stable and excellent device performance. The memory device characteristics were not degraded even under the bending situation with a given curvature radius of 3.3 mm.
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