(Invited) Fine Temperature Monitoring of Si Wafer for Plasma Processing

Abstract

One of the critical parameters in many semiconductor-processing steps such as plasma etching, chemical vapor deposition, and so on, is the substrate temperature. For example, the etch rate and etch profile are sensitive to the substrate temperature in the plasma etching process. However, contact measurement such as thermo-couples and fluorescent temperature sensor cannot measure the accurate temperature, especially in low pressure due to poor thermal transfer between the wafer and the probe. We have developed the non-contact temperature measurement of substrates by using optical low-coherence interferometer. [1-6] The low-coherence interferometry is based on Michelson interferometry, and a white light such as a super-luminescent diode (SLD) was used as a low-coherence light source. SLD has the central wavelengths of 1325 nm and the full width at half maximum of 64.5 nm. The light which is reflected at the surface of Si substrate interfered with the light reflected at the scanning reference mirror. The interfered light was detected with a spectrometer and the signal which is a frequency domain spectrum was converted to a time domain signal by inverse Fourier transformation. The temperature of the Si substrate is derived from the change in the optical path length of Si substrate due to thermal expansion and changes in the refractive index. The temperatures of Si wafer and chamber parts made of Si were successfully monitored in the SiO2 plasma etching using capacitively coupled plasma. The performance was compared with that of fluorescent temperature sensor. From these results, we have demonstrated highly precise and rapid response measurement of the temperature of Si wafer at real time by using Fourier domain low coherence interferometer.