Abstract
FDSOI substrates enable the manufacturing of technologies well suited for IoT application. 22FDX is the first FDSOI technology in GLOBALFOUNDRIES. It uses HKMG gate-first technology on very thin (undoped) SOI film. It was optimized for both low dynamic power and best-in-class RF performance by minimizing parasitics. Most prominent feature is back-gate biasing which allows the adjustment of the device properties either to higher drive current or lower leakage based on the need. This can be utilized in innovative design features to compensate for process variation, temperature conditions, or aging. The next node 12FDX is in development providing a full-node area shrink at enhanced performance and functionality.
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