Abstract
The characteristics of the lateral IGBT on an SOI film when the collector voltage of the IGBT is applied to the substrate are investigated for its application to a high side switch. The measurements of the blocking capability and the dynamic latch-up current during the turn-off transient under an inductive load are carried out with varying thicknesses of the SOI film. A 260 V IGBT can be fabricated on a 5 /spl mu/m thick SOI film without the special device structure. The dynamic latch-up current is improved by reducing the SOI film thickness. This paper shows that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on a thin SOI film.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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