Abstract
The crystallinity and electrical properties of ferroelectric Hf0.43Zr0.57O2 (HZO) thin films fabricated using atomic layer deposited ZrO2 nucleation layers (ZrO2-NLs) were systematically studied. The remanent polarization (2P r= 29 µC/cm2) and dielectric constant (k = 32) of the TiN/HZO (10 nm)/TiN capacitors inserting the top- and bottom-ZrO2-NLs (D-ZrO2) were significantly higher than those (2P r= 12 µC/cm2 and k = 24) without (w/o) ZrO2-NL. Moreover, the crystal structure of HZO films was found to correlate with 2P rand k. These characteristics were dominantly due to the epitaxial-like grain growth of the HZO film on the top- and bottom-ZrO2-NLs. D-ZrO2 exhibited a lower leakage current density compared with that of w/o, owing to the larger total thickness including the double ZrO2-NLs (4.0 nm). Furthermore, D-ZrO2 showed superior endurance properties than w/o. Therefore, fabrication technique of ferroelectric HZO films using ZrO2-NL is one of promising methods for future ferroelectric memory device applications.
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