Abstract
Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scattering that ETB GOI channels, particularly (111) GOI channels, are promising for this purpose. High-quality ETB GOI channels are formed by the Ge condensation and smart-cut technology. The operations of Ge p- and n-MOSFETs with the body thickness down to 2 nm are experimentally demonstrated and the body thickness dependencies of the effective mobility are examined. The importance of strain and surface orientation engineering on mobility in an ETB region is addressed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
