(Invited) Extremely Short Channel Si-MOSFETs Prepared on SOI Substrates Using Anisotropic Wet Etching

Abstract

Electrical properties of extremely short channel Si-MOSFETs are examined. Nanometer-scale channels are fabricated by the V-shape groove formation on SOI substrate using anisotropic wet etching technique. The channel length, defined as the width of the Vgroove bottom, is as short as 3 nm. Source, channel, and drain regions are uniformly highly doped by the same dopant species. Excellent transistor characteristics with threshold voltages that are optimal for low-power operation are obtained for both n-FETs and p-FETs when the thicknesses of both the channel and gate dielectric film thickness are reduced to 1 nm. Contributions of quantum effects in the nanometer-scale channel are discussed.