Abstract
Strain engineering of group IV semiconductors has been extensively investigated with an aim to produce high mobility platform for high performance electronic devices. The lattice strain significantly affects the carrier mobility via modulation of the energy band structure and its effect on the crystalline defect formation. The lattice structure of the strained crystal is determined by the amount of the strain and the boundary condition. In this study, the morphological aspects and the electronic properties of the (110)-oriented strained Si/SiGe/Si heterostructures grown by molecular beam epitaxy (MBE) have been studied. Potential of this material system as a high hole mobility semiconductor platform is discussed. It has been found that highly anisotropic lattice strain and defect configuration can be realized in this heterostructure and that this anisotropic feature plays important roles in the enhancement of the hole mobility.
Published Version
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