Abstract
The dielectric properties of atomic layer deposited pure Al2O3 and Si doped Al2O3 thin films were characterized by various measurement techniques. By the use of capacitance voltage and conductance measurements charged defects within the oxide and at the silicon interface were detected. It was shown that the passivation quality of Al2O3 is strongly related to the density of fixed oxide charges Qf and the interface trap density Dit. The fixed charge density could be adjusted from -6.2∙1012 cm-2 for samples annealed at 500°C to +2.1∙1012 cm-2 for as deposited Si doped layers. Additionally current voltage characteristics were performed in a temperature range from 25°C to 125°C. The leakage current was found to increase with higher temperature. A barrier height of 0.4 eV was extracted from the data by assuming a Pool-Frenkel mechanism.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
