Abstract
The utilization of non-metallic phosphorus (P) doping is recognized for its advantages in enhancing the conductivity of hematite while minimizing recombination. This is attributed to the suppression of electron trapping facilitated by the favorable electron state of P5+. However, our investigation reveals a significant impact on the overall photoelectrochemical (PEC) performance of P-doped Fe2O3 due to tin (Sn) diffusion from the bottom FTO substrate. Upon identifying the unfavorable interaction between the unintentional dopant Sn4+ and intentional dopant P5+, we have developed a straightforward P-doping method. The resulting P:Sn:Ti-Fe2O3 (P:Sn:Ti triple-doped Fe2O3) exhibits a remarkable improvement in photocurrent density, reaching 3.44 mA cm−2 at 1.23 VRHE, surpassing values reported in previous P-doping hematite studies. Following co-catalyst deposition, the NiFeOx/P:Sn:Ti-Fe2O3 photoanode achieves a maximum photocurrent density of 4.30 mA cm−2 at 1.23 VRHE. This study affirms that suppressing the negative interaction between dopants is crucial for significantly enhancing PEC performance.
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