Abstract

Molecular doping is an effective tool to enhance bulk conductivity, increase carrier injection and de-activate electron or hole traps in organic molecular and polymer semiconductors. Considerable effort has been directed toward the synthesis of powerful and stable p-type and n-type molecular dopants over the past decade.[1,2] This talk reviews a range of molecular redox agents used in organic electronics, with focus on strong reductants and oxidants for organic semiconductors with low electron affinity (EA) and large ionization energy (IE), respectively. In particular, we look at air-stable dimers, e.g. [RuCp*Mes]2, formed of 19-electron organometallic sandwich compounds able to reduce organic semiconductors with EA well below 3 eV.[3] We review powerful single-electron molecular oxidants, e.g. F6-TCNNQ and CN6-CP, which can introduce holes in organic semiconductors with IE larger than 5.6 eV. Applications of these n- and p-dopants to improve the conductivity of carrier injection layers and create large gap semiconductor p-i-n structures are described.[4] The last part of the talk focuses on recent work on adduct-based p-doping of organic semiconductors, applicable to a range of hole transport materials.[5][1]S. Barlow, S.R. Marder, X. Lin, F. Zhang and A. Kahn, Electrical Doping of Organic Semiconductors with Molecular Oxidants and Reductants, Handbook of Conducting Polymers (2019)[2] G. Song, S.B. Kim,S. Mohapatra, Y. Qi, T. Sajoto, A. Kahn, S.R. Marder, S. Barlow, n-Doping of Organic Electronic Materials Using Air-Stable Organometallics, Adv. Mat. 24, 699 (2012)[3] X. Lin, B. Wegner, K. M. Lee, M. A. Fusella, F. Zhang, K. Moudgil, B. P. Rand, S. Barlow, S. R. Marder, N. Kochand A. Kahn, Beating the Thermodynamic Limit: Photo-Activation of n-Doping in Organic Semiconductors, Nature Materials 16, 1209 (2017)[4] H. L. Smith, J. T. Dull, S. Mohapatra, S. Barlow, S. Marder, B. P. Rand, and A. Kahn, Powerful organic molecular oxidant and reductant enable a large gap, blue light-emitting organic homojunction diode, ACS Appl. Mat. Int. 14, 2381 (2022)[5] N. Sakai, R. Warren, F. Zhang, S. Nayak, S. V. Kesava, Y.-H. Lin, H. S. Biswal, X. Lin, A. Kahn, M. Riede, P. K. Nayak and H. J. Snaith, Adduct-based p-doping of Organic Semiconductors, Nature Materials, 20, 1248 (2021)

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