Abstract
Dopant activation of Si implanted In0.53Ga0.47As (InGaAs) following laser spike annealing (LSA) was studied at temperatures up to 1000oC with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were directly measured using Pt thermistors and calibrated to the known decomposition temperature of a simple polymer. Using spatially resolved probes with single laser stripe scans, the temperature dependent activation and damage behaviors were determined. Compared to furnace annealing, LSA was found to increase active carrier concentration and extend the temperature limit before damage. CAPRES 4-point measurements were used to determine carrier activation while Raman analysis of the LO phonon peak and LO phonon-plasmon coupling mode (LOPCM) peak was used to monitor crystal quality and carrier concentrations. For a 1014 cm-2 Si implant at 20keV, a minimum sheet resistance of 135 Ω/sq was obtained for a 1000 μs dwell at 845oC, with a peak carrier concentration near 8x1018 cm-3.
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