Abstract
A bottleneck issue of oxide TFTs is the instability under bias stresses and illuminations. Furthermore, the carrier mobility needs improvement for high pixel density and high brightness displays. Here, we use a high work-function Schottky source contact to enable depletion around the TFT source region. This results in a high intrinsic immunity to negative bias illumination stress, no obvious short channel effect, and extremely flat current saturation at low drain voltages. A voltage gain reaching 23,000 V/V is obtained due to the flat saturation current, which is the highest ever achieved with a solid-state transistor. Furthermore, the Schottky barrier depletion allows to utilize ITO to replace IGZO as the channel layer, which significantly enhances carrier mobility. Because ITO is used for both channel and drain electrode, the TFT appears to have no channel, enabling aggressive scaling for a significant increase in flat-panel display pixel aperture ratio, brightness and pixel density.
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